PART |
Description |
Maker |
UPA807 UPA807T UPA807T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
|
NEC[NEC]
|
BBY26-S1 BBY24 Q62702-B23-S2 BBY24-BBY27 BBY24-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) 硅调谐变容二极管(突变结调谐二极管调谐范20伏) 1 UF 10% 25V X7R (1206) CHIP CAP TR RESISTOR, 1% SMT 0603 From old datasheet system
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SIEMENS A G Siemens Group SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62702-B599 BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Siemens Group
|
GC1500B GC1500B-2 |
Hyperabrupt - Abrupt, UHF Microwave Tuning Diodes 30V Vrrm, 800fF Capacitance Varactor Diode
|
MSI Electronics, Inc.
|
KDV1472 |
FM Tuning VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(FM RADIO BAND TUNING) Negative Fixed Linear Voltage Regulators; Package: TO-99; VDIFF (V): 35; IOUT (A): 1.5;
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V) Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V) From old datasheet system
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BBY57 BBY57-02L BBY57-02V BBY57-05W BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
|
Mini-Circuits
|
MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER (MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
L132CB4YD L132CB3ID L132CB5YD L132CB4ID L132CB4GD |
1.8 x 5.3 mm, 4 elements LED array. Yellow. Lens type yellow diffused. 1.8 x 5.3 mm, 3 elements LED array. High effiency red. Lens type red diffused. 1.8 x 5.3 mm, 5 elements LED array. Yellow. Lens type yellow diffused. 1.8 x 5.3 mm, 4 elements LED array. High effiency red. Lens type red diffused. 1.8 x 5.3 mm, 4 elements LED array. Green. Lens type green diffused.
|
Kingbright Electronic
|
BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|